Skip navigation
Skip navigation

Effect of Rapid Thermal Annealing on the Electrical Properties of Ion-Beam-Synthesized Oxide Layers Using 12 keV O 2 + Bombardment of Si

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68129
Source: Surface and Interface Analysis

Download

There are no files associated with this item.


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator