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The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Jolley, Greg; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe


We report on a detailed analysis of the effects of doping on the main device parameters of In0.5Ga0.5As/GaAs/Al 0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Due to the relatively large conduction band offset of GaAs/Al 0.2Ga0.8As (167meV) transitions from wetting layer to quantum well states are observed for the highly doped devices. Since increasing the doping concentration fills the quantum dot states, electrons are forced to occupy the one-dimensional wetting layer states and...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Nanoscale
DOI: 10.1039/c0nr00128g


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