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Tuning defect-related photoluminescence of Ge nanocrystals by stress

Yuan, Cao; Chu, J. G.; Lei, Wen

Description

Ge nanocrystals embedded in SiO2 and Lu2O3 thin films were fabricated using a pulsed laser deposition method. Two dimensional finite element calculations and Raman spectra clearly revealed that the Ge nanocrystals certainly experienced greater compressive stress in a Lu2O3 thin film than in a SiO2 thin film. This may lead to much more stress-relaxing defects at the interface of Ge nanocrystals embedded in a Lu2O3 thin film and thus enhances the intensity of defect-related photoluminescence. The...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/67896
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-010-5588-1

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