Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon
Micrometer-scale deep-level spectral photoluminescence (PL) from dislocations is investigated around the subgrain boundaries in multicrystalline silicon. The spatial distribution of the D lines is found to be asymmetrically distributed across the subgrain boundaries, indicating that defects and impurities are decorated almost entirely on one side of the subgrain boundaries. In addition, the D1 and D2 lines are demonstrated to have different origins due to their significantly varying behaviors...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
|01_Nguyen_Micrometer-Scale_Deep-Level_2015.pdf||575.52 kB||Adobe PDF||Request a copy|
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