Skip navigation
Skip navigation

Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: Demonstration of surface passivation and negative interfacial charge

Allen, Thomas; Cuevas, Andres

Description

Herein we report on the passivation of crystalline silicon by gallium oxide (Ga<inf>2</inf>O<inf>3</inf>) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p-type silicon, from which a surface recombination current density J<inf>0</inf> of 7 fA cm-2 is extracted. From high frequency capacitance-voltage (HF CV) measurements it is shown that, as in the case of Al<inf>2</inf>O<inf>3</inf>,...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/67512
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201510056

Download

File Description SizeFormat Image
01_Allen_Plasma_enhanced_atomic_layer_2015.pdf495.94 kBAdobe PDF    Request a copy
02_Allen_Plasma_enhanced_atomic_layer_2015.pdf495.94 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator