Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: Demonstration of surface passivation and negative interfacial charge
Herein we report on the passivation of crystalline silicon by gallium oxide (Ga<inf>2</inf>O<inf>3</inf>) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p-type silicon, from which a surface recombination current density J<inf>0</inf> of 7 fA cm-2 is extracted. From high frequency capacitance-voltage (HF CV) measurements it is shown that, as in the case of Al<inf>2</inf>O<inf>3</inf>,...[Show more]
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|Source:||Physica Status Solidi: Rapid Research Letters|
|01_Allen_Plasma_enhanced_atomic_layer_2015.pdf||495.94 kB||Adobe PDF||Request a copy|
|02_Allen_Plasma_enhanced_atomic_layer_2015.pdf||495.94 kB||Adobe PDF||Request a copy|
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