Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Burke, Anthony; Waddington, D. E. J.; Carrad, D. J.; Lyttleton, R. W.; Reece, Peter; Klochan, O.; Hamilton, Alexander Rudolf; Rai, A.; Reuter, D; Wieck, Andreas Dirk; Micolich, Adam Paul; Tan, Hark Hoe
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent "leakiness" of gates on...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
|Access Rights:||Open Access|
|01_Burke_Origin_of_gate_hysteresis_in_2012.pdf||2.2 MB||Adobe PDF|
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