Skip navigation
Skip navigation

Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Burke, Anthony; Waddington, D. E. J.; Carrad, D. J.; Lyttleton, R. W.; Reece, Peter; Klochan, O.; Hamilton, Alexander Rudolf; Rai, A.; Reuter, D; Wieck, Andreas Dirk; Micolich, Adam Paul; Tan, Hark Hoe


Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent "leakiness" of gates on...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.86.165309
Access Rights: Open Access


File Description SizeFormat Image
01_Burke_Origin_of_gate_hysteresis_in_2012.pdf2.2 MBAdobe PDF

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator