Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
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Burke, Anthony; Waddington, D. E. J.; Carrad, D. J.; Lyttleton, R. W.; Reece, Peter; Klochan, O.; Hamilton, Alexander Rudolf; Rai, A.; Reuter, D; Wieck, Andreas Dirk; Micolich, Adam Paul; Tan, Hark Hoe
Description
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent "leakiness" of gates on...[Show more]
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/67397 |
Source: | Physical Review B: Condensed Matter and Materials |
DOI: | 10.1103/PhysRevB.86.165309 |
Access Rights: | Open Access |
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01_Burke_Origin_of_gate_hysteresis_in_2012.pdf | 2.2 MB | Adobe PDF |
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