Improved quantitative description of Auger recombination in crystalline silicon
An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
|01_Richter_Improved_quantitative_2012.pdf||1.42 MB||Adobe PDF|
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