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Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Kang, Jung-Hyun; Gao, Qiang; Parkinson, Patrick; Joyce, Hannah J; Jagadish, Chennupati; Guo, Y.; Xu, Hong-Yi; Zou, Jin; Kim, Yong; Tan, Hark Hoe


Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Nanotechnology
DOI: 10.1088/0957-4484/23/41/415702


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