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Investigating Internal Gettering of Iron at Grain Boundaries in Multicrystalline Silicon via Photoluminescence Imaging

Liu, An Yao; Walters, Daniel; Phang, Sieu Pheng; MacDonald, Daniel

Description

In this paper, we present measurements and modeling of the reduction in dissolved iron Fe; concentrations near grain boundaries in multicrystalline silicon (mc-Si) wafers. The measurements of the interstitial Fe concentrations are obtained via photoluminescence images taken before and after iron-boron pair dissociation. A simple diffusion-capture model was developed to characterize the removal of interstitial Fe by the gettering sites. The model is based on a numerical solution to the 1-D...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/66963
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2012.2195550

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