Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
We have improved the stability and performance of terahertz (THz) photoconductive (Auston) switches using a combination of (NH4) 2S surface passivation (SP) and silicon nitride (Si3 N4) encapsulation. The influences of SP and encapsulation on the ultrafast electron dynamics in GaAs were examined using THz emission spectroscopy and optical pumpTHz probe spectroscopy. The power of THz radiation from the surface of photoexcited GaAs increased by a factor of 5 after passivation and encapsulation,...[Show more]
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|Source:||IEEE Journal on Selected Topics in Quantum Electronics|
|01_Headley_Improved_performance_of_2011.pdf||350.78 kB||Adobe PDF||Request a copy|
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