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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Chen, Zi-Bin; Lei, Wen; Chen, Bin; Wang, Yan-Bo; Liao, Xiao-Zhou; Zou, Jin; Ringer, Simon Peter; Jagadish, Chennupati; Tan, Hark Hoe

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InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted...[Show more]

dc.contributor.authorChen, Zi-Bin
dc.contributor.authorLei, Wen
dc.contributor.authorChen, Bin
dc.contributor.authorWang, Yan-Bo
dc.contributor.authorLiao, Xiao-Zhou
dc.contributor.authorZou, Jin
dc.contributor.authorRinger, Simon Peter
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-10T23:22:47Z
dc.identifier.issn1556-276X
dc.identifier.urihttp://hdl.handle.net/1885/66661
dc.description.abstractInAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.
dc.publisherSpringer
dc.rightsAuthor/s retain copyright
dc.sourceNanoscale Research Letters
dc.subjectKeywords: Crystalline samples; Droplet epitaxy; InAs/GaAs; Interfacial structures; Substrate surface; Surface oxidations; Dislocations (crystals); Drops; Electron microscopes; Electron microscopy; Epitaxial growth; Oxidation; Semiconductor quantum dots Droplet epitaxy; Electron microscopy; Misfit dislocations; Oxidation; Quantum dot
dc.titleCan misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume7
dc.date.issued2012
local.identifier.absfor020504 - Photonics, Optoelectronics and Optical Communications
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationf5625xPUB1322
local.type.statusPublished Version
local.contributor.affiliationChen, Zi-Bin, University of Sydney
local.contributor.affiliationLei, Wen, University of Western Australia
local.contributor.affiliationChen, Bin, University of Sydney
local.contributor.affiliationWang, Yan-Bo, University of Sydney
local.contributor.affiliationLiao, Xiao-Zhou, University of Sydney
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationRinger, Simon Peter, University of Sydney
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage486
local.identifier.doi10.1186/1556-276X-7-486
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T08:45:04Z
local.identifier.scopusID2-s2.0-84866083414
local.identifier.thomsonID000311311600001
dcterms.accessRightsOpen Access
CollectionsANU Research Publications

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