Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted...[Show more]
|Collections||ANU Research Publications|
|Source:||Nanoscale Research Letters|
|01_Chen_Can_misfit_dislocations_be_2012.pdf||1.01 MB||Adobe PDF|
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