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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Chen, Zi-Bin; Lei, Wen; Chen, Bin; Wang, Yan-Bo; Liao, Xiao-Zhou; Zou, Jin; Ringer, Simon Peter; Jagadish, Chennupati; Tan, Hark Hoe


InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Nanoscale Research Letters
DOI: 10.1186/1556-276X-7-486
Access Rights: Open Access


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