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Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

Corr, Cormac; Boswell, Roderick; Carman, Robert John

Description

A remote plasma chemical vapour deposition (RPCVD) system for the growth of gallium nitride (GaN) thin films is investigated using optical emission spectroscopy (OES). The intensities of the various excited species in pure nitrogen as well as nitrogen/hydrogen plasmas are correlated with GaN film growth characteristics. We show a correlation between the plasma source spectrum, the downstream spectrum where trimethylgallium is introduced and the GaN film quality. In particular, we investigate...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65994
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/44/4/045201

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