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Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Ignatiev, Alex; Hwang, Hyunsang

Description

Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a...[Show more]

dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorLiu, Xinjun
dc.contributor.authorShin, Jungho
dc.contributor.authorKim, Insung
dc.contributor.authorJung, Seungjae
dc.contributor.authorSiddik, Manzar
dc.contributor.authorLee, Joonmyoung
dc.contributor.authorIgnatiev, Alex
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:55Z
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/1885/65836
dc.description.abstractResistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a rectification ratio >60 at 2 V in a low-resistance state. The switching mechanisms in our device can be interpreted as oxygen-migration- induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can reduce misreading errors in a cross-point array and provides a feasible way to achieve high memory density.
dc.publisherElsevier
dc.sourceCurrent Applied Physics
dc.subjectKeywords: Bistables; Bottom electrodes; Chemical bonding state; Cross-point application; Cross-point array; Low-resistance state; Memory density; Random access memories; Rectification ratio; Rectifying effect; Resistive switching; Reverse bias; Schottky contacts; S Cross-point application; Pt/TiO2/W; Rectifying effect; Resistive random-access memory (RRAM); Sol-gel
dc.titleHighly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume11
dc.date.issued2011
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor091201 - Ceramics
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationU3488905xPUB1168
local.type.statusPublished Version
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationShin, Jungho, Gwangju Institute of Science and Technology
local.contributor.affiliationKim, Insung, Gwangju Institute of Science and Technology
local.contributor.affiliationJung, Seungjae, Gwangju Institute of Science and Technology
local.contributor.affiliationSiddik, Manzar, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Joonmyoung, Gwangju Institute of Science and Technology
local.contributor.affiliationIgnatiev, Alex, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue4 SUPPL.
local.bibliographicCitation.startpageS102
local.bibliographicCitation.lastpageS106
local.identifier.doi10.1016/j.cap.2011.07.018
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T09:57:40Z
local.identifier.scopusID2-s2.0-80455174728
CollectionsANU Research Publications

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