Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
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Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Ignatiev, Alex; Hwang, Hyunsang
Description
Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a...[Show more]
dc.contributor.author | Biju, Kuyyadi P. | |
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dc.contributor.author | Liu, Xinjun | |
dc.contributor.author | Shin, Jungho | |
dc.contributor.author | Kim, Insung | |
dc.contributor.author | Jung, Seungjae | |
dc.contributor.author | Siddik, Manzar | |
dc.contributor.author | Lee, Joonmyoung | |
dc.contributor.author | Ignatiev, Alex | |
dc.contributor.author | Hwang, Hyunsang | |
dc.date.accessioned | 2015-12-10T23:18:55Z | |
dc.identifier.issn | 1567-1739 | |
dc.identifier.uri | http://hdl.handle.net/1885/65836 | |
dc.description.abstract | Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a rectification ratio >60 at 2 V in a low-resistance state. The switching mechanisms in our device can be interpreted as oxygen-migration- induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can reduce misreading errors in a cross-point array and provides a feasible way to achieve high memory density. | |
dc.publisher | Elsevier | |
dc.source | Current Applied Physics | |
dc.subject | Keywords: Bistables; Bottom electrodes; Chemical bonding state; Cross-point application; Cross-point array; Low-resistance state; Memory density; Random access memories; Rectification ratio; Rectifying effect; Resistive switching; Reverse bias; Schottky contacts; S Cross-point application; Pt/TiO2/W; Rectifying effect; Resistive random-access memory (RRAM); Sol-gel | |
dc.title | Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 11 | |
dc.date.issued | 2011 | |
local.identifier.absfor | 020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity | |
local.identifier.absfor | 091201 - Ceramics | |
local.identifier.absfor | 091203 - Compound Semiconductors | |
local.identifier.ariespublication | U3488905xPUB1168 | |
local.type.status | Published Version | |
local.contributor.affiliation | Biju, Kuyyadi P., Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Liu, Xinjun, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Shin, Jungho, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Kim, Insung, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Jung, Seungjae, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Siddik, Manzar, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Lee, Joonmyoung, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Ignatiev, Alex, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Hwang, Hyunsang, Gwangju Institute of Science and Technology | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 4 SUPPL. | |
local.bibliographicCitation.startpage | S102 | |
local.bibliographicCitation.lastpage | S106 | |
local.identifier.doi | 10.1016/j.cap.2011.07.018 | |
local.identifier.absseo | 970102 - Expanding Knowledge in the Physical Sciences | |
dc.date.updated | 2016-02-24T09:57:40Z | |
local.identifier.scopusID | 2-s2.0-80455174728 | |
Collections | ANU Research Publications |
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