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The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices

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Zhang, Feng; Li, Xiaomin; Gao, Xiangdong; Wu, Liang; Cao, Xun; Liu, Xinjun; Yang, Rui

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Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS) was observed in Pt/TiO2/Pt memory devices. The URS and BRS of this device exhibited different low resistance states but shared the same high resistance state. The conduction mechanisms of low resistance states in URS and BRS are Ohmic conduction and electrons tunneling, respectively, while the high resistance state is controlled by Schottky barrier formed at the top interface of Pt/TiO2. The...[Show more]

dc.contributor.authorZhang, Feng
dc.contributor.authorLi, Xiaomin
dc.contributor.authorGao, Xiangdong
dc.contributor.authorWu, Liang
dc.contributor.authorCao, Xun
dc.contributor.authorLiu, Xinjun
dc.contributor.authorYang, Rui
dc.date.accessioned2015-12-10T23:18:54Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/65830
dc.description.abstractReversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS) was observed in Pt/TiO2/Pt memory devices. The URS and BRS of this device exhibited different low resistance states but shared the same high resistance state. The conduction mechanisms of low resistance states in URS and BRS are Ohmic conduction and electrons tunneling, respectively, while the high resistance state is controlled by Schottky barrier formed at the top interface of Pt/TiO2. The temperature dependence of resistance states indicates Magnéli phase filaments formed in URS. A unified model was then proposed to demonstrate the unification of filament and interfacial switching mechanisms.
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Conduction Mechanism; High-resistance state; Low-resistance state; Ohmic conduction; Resistance state; Resistive switching; Resistive switching mechanisms; Schottky barriers; Switching mechanism; Temperature dependence; Unified model; Platinum; Schottky b
dc.titleThe unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume109
dc.date.issued2011
local.identifier.absfor100604 - Memory Structures
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationU3488905xPUB1167
local.type.statusPublished Version
local.contributor.affiliationZhang, Feng, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLi, Xiaomin, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationGao, Xiangdong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationWu, Liang, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationCao, Xun, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYang, Rui, National Institute for Materials Science
local.description.embargo2037-12-31
local.bibliographicCitation.issue10
local.identifier.doi10.1063/1.3583669
local.identifier.absseo970110 - Expanding Knowledge in Technology
dc.date.updated2016-02-24T09:57:40Z
local.identifier.scopusID2-s2.0-79958858749
CollectionsANU Research Publications

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