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Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices

Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong; Park, Sangsu; Shin, Jungho; Kim, Insung; Sadaf, Sharif Md.; Hwang, Hyunsang

Description

Yttria-stabilized zirconia (YSZ) layers of various thicknesses were designed and introduced before Pr0.7Ca0.3MnO3 (PCMO) film was deposited on W bottom electrodes with a submicron via-hole structure. By changing the thickness of the YSZ barrier layer (3,5,9, and 13 nm), a tunable memory window can be realized while low power consumption (Pmax < 4 μW) is maintained. Resistive switching (RS) in a Pt/PCMO/YSZ/W stack with a thin YSZ layer can be ascribed to an oxidation/reduction reaction caused...[Show more]

dc.contributor.authorLiu, Xinjun
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorPark, Jubong
dc.contributor.authorPark, Sangsu
dc.contributor.authorShin, Jungho
dc.contributor.authorKim, Insung
dc.contributor.authorSadaf, Sharif Md.
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:52Z
dc.identifier.issn1533-4880
dc.identifier.urihttp://hdl.handle.net/1885/65819
dc.description.abstractYttria-stabilized zirconia (YSZ) layers of various thicknesses were designed and introduced before Pr0.7Ca0.3MnO3 (PCMO) film was deposited on W bottom electrodes with a submicron via-hole structure. By changing the thickness of the YSZ barrier layer (3,5,9, and 13 nm), a tunable memory window can be realized while low power consumption (Pmax < 4 μW) is maintained. Resistive switching (RS) in a Pt/PCMO/YSZ/W stack with a thin YSZ layer can be ascribed to an oxidation/reduction reaction caused by a ring-type PCMO/W contact, while RS with a thick YSZ layer may be related to oxygen migration across the YSZ layer between the PCMO film and the W bottom electrode and the increase (decrease) of the effective tunnel barrier height of the YSZ layer. Excellent RS behavior characteristics, such as a large RHRS/RLRS ratio (> 103), die-to-die uniformity, sweeping endurance, and a retention time of more than 103 s, can be obtained by optimizing the thickness of YSZ layer.
dc.publisherAmerican Scientific Publishers
dc.sourceJournal of Nanoscience and Nanotechnology
dc.subjectKeywords: Barrier layers; Behavior characteristic; Bottom electrodes; Low Power; Low-power consumption; Memory window; Oxygen migration; Random access memories; Resistive switching; Retention time; RRAM; Submicron; Tunnel barrier; Via-hole; Manganese oxide; Mangani Low power; Manganites; Memory window; RRAM
dc.titleLow-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume12
dc.date.issued2012
local.identifier.absfor100604 - Memory Structures
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationU3488905xPUB1165
local.type.statusPublished Version
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Jubong, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsu, Gwangju Institute of Science and Technology
local.contributor.affiliationShin, Jungho, Gwangju Institute of Science and Technology
local.contributor.affiliationKim, Insung, Gwangju Institute of Science and Technology
local.contributor.affiliationSadaf, Sharif Md., Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage3252
local.bibliographicCitation.lastpage3255
local.identifier.doi10.1166/jnn.2012.5606
local.identifier.absseo970109 - Expanding Knowledge in Engineering
dc.date.updated2016-02-24T09:57:39Z
local.identifier.scopusID2-s2.0-84863320094
local.identifier.thomsonID000305850900050
CollectionsANU Research Publications

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