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Forming-free colossal resistive switching effect in rare-earth-oxide Gd2 O3 films for memristor applications

Cao, Xun; Li, Xiaomin; Gao, Xiangdong; Yu, Weidong; Liu, Xinjun; Zhang, Yiwen W; Chen, Lidong; Cheng, Xinhong

Description

The reproducible forming-free resistive switching (RS) behavior in rare-earth-oxide Gd2 O3 polycrystalline thin film was demonstrated. The characteristic of this forming-free RS was similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance state (LRS). An ultrahigh resistance switching ratio from HRS to LRS of about six to seven orders of magnitude was achieved at a bias voltage of 0.6...[Show more]

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/65681
Source: Journal of Applied Physics
DOI: 10.1063/1.3236573

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