Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films
Polycrystalline TiO2 thin films were formed on Pt(1 1 1)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600 °C to 800 °C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase
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|Source:||Journal of Alloys and Compounds|
|01_Cao_Structural_characteristics_and_2009.pdf||712.8 kB||Adobe PDF||Request a copy|
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