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Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Cao, Xun; Li, Xiaomin; Yu, Weidong; Zhang, Yiwen W; Yang, Rui; Liu, Xinjun; Kong, Jingfang; Shen, Wenzhong


Polycrystalline TiO2 thin films were formed on Pt(1 1 1)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600 °C to 800 °C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
Source: Journal of Alloys and Compounds
DOI: 10.1016/j.jallcom.2009.06.175


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