Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices
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Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Hwang, Hyunsang
Description
The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be...[Show more]
dc.contributor.author | Biju, Kuyyadi P. | |
---|---|---|
dc.contributor.author | Liu, Xinjun | |
dc.contributor.author | Bourim, El Mostafa | |
dc.contributor.author | Kim, Insung | |
dc.contributor.author | Jung, Seungjae | |
dc.contributor.author | Siddik, Manzar | |
dc.contributor.author | Lee, Joonmyoung | |
dc.contributor.author | Hwang, Hyunsang | |
dc.date.accessioned | 2015-12-10T23:18:24Z | |
dc.identifier.issn | 0022-3727 | |
dc.identifier.uri | http://hdl.handle.net/1885/65612 | |
dc.description.abstract | The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density. | |
dc.publisher | Institute of Physics Publishing | |
dc.source | Journal of Physics D: Applied Physics | |
dc.subject | Keywords: Bistables; Bottom electrodes; Crossbar arrays; Low-resistance state; Memory density; Rectification ratio; Rectifying effect; Resistive switching; Reverse bias; Schottky contacts; Sol-gel spin coating; Solution-processed; Switching mechanism; TiO; Via-hole | |
dc.title | Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 43 | |
dc.date.issued | 2010 | |
local.identifier.absfor | 091205 - Functional Materials | |
local.identifier.absfor | 091203 - Compound Semiconductors | |
local.identifier.ariespublication | U3488905xPUB1132 | |
local.type.status | Published Version | |
local.contributor.affiliation | Biju, Kuyyadi P., Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Liu, Xinjun, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Bourim, El Mostafa, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Kim, Insung, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Jung, Seungjae, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Siddik, Manzar, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Lee, Joonmyoung, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Hwang, Hyunsang, Gwangju Institute of Science and Technology | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 49 | |
local.bibliographicCitation.startpage | 1 | |
local.bibliographicCitation.lastpage | 5 | |
local.identifier.doi | 10.1088/0022-3727/43/49/495104 | |
local.identifier.absseo | 970109 - Expanding Knowledge in Engineering | |
dc.date.updated | 2016-02-24T09:57:18Z | |
local.identifier.scopusID | 2-s2.0-78650102388 | |
Collections | ANU Research Publications |
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