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Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo; Shin, Jungho; Park, Jubong; Lee, Joonmyoung; Park, Sangsu; Hwang, Hyunsang

Description

The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide1-oxide2-metal stack was provided to...[Show more]

dc.contributor.authorLiu, Xinjun
dc.contributor.authorSadaf, Sharif Md.
dc.contributor.authorSon, Myungwoo
dc.contributor.authorShin, Jungho
dc.contributor.authorPark, Jubong
dc.contributor.authorLee, Joonmyoung
dc.contributor.authorPark, Sangsu
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:20Z
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/65581
dc.description.abstractThe combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide1-oxide2-metal stack was provided to accommodate the evolution trend. We show that electroformed W-NbOx-Pt devices can simultaneously exhibit both threshold switching and memory switching. A qualitative model was suggested to elucidate the unique properties in a W-NbOx-Pt stack, where threshold switching is associated with a localized metal-insulator transition in the NbOx bulk, and the bipolar RS derives from a redox at the tip of the localized filament at the WOx-NbOx interface. Such a simple metal-oxide-metal structure, with functionally separated bulk and interface effects, provides a fabrication advantage for future high-density cross-point memory devices.
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.subjectKeywords: Bi-layer; Conceptual structures; Cross-point array; Evolution trend; High-density; Interface effect; Key parameters; Memory applications; Memory element; Memory switching; Qualitative model; Resistive switching; Switch element; Threshold switching; Metal
dc.titleDiode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume22
dc.date.issued2011
local.identifier.absfor100604 - Memory Structures
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationU3488905xPUB1127
local.type.statusPublished Version
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSadaf, Sharif Md., Gwangju Institute of Science and Technology
local.contributor.affiliationSon, Myungwoo, Gwangju Institute of Science and Technology
local.contributor.affiliationShin, Jungho, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Jubong, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Joonmyoung, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsu, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue47
local.identifier.doi10.1088/0957-4484/22/47/475702
local.identifier.absseo970109 - Expanding Knowledge in Engineering
dc.date.updated2016-02-24T09:57:16Z
local.identifier.scopusID2-s2.0-80655144552
local.identifier.thomsonID000296759000012
CollectionsANU Research Publications

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