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Realization of rectifying and resistive switching behaviors of TiO2 nanorod arrays for nonvolatile memory

Zhang, Feng; Gan, Xiaoyan; Li, Xiaomin; Wu, Liang; Gao, Xiangdong; Zheng, Renkui; He, Yong; Liu, Xinjun; Yang, Rui

Description

Both the rectifying and resistive switching behaviors are reported in single-crystalline TiO2 nanorod arrays (NRAs). The transition from rectifying to bipolar resistive switching behavior can be controlled by a forming process. The surface of TiO2 nanorods and the Pt/TiO2 NRAs interface play crucial roles on resistive switching. In low resistance state, the dependence of resistance on cell area indicates that filaments form on each individual nanorod, which contributes to the narrow...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65550
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.3617442

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