Skip navigation
Skip navigation
A change is coming. Click to see a sneak peek of the new Open Research Repository.

Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications

Request a Copy

link to publisher version

  • Altmetric Citations

Liu, Xinjun; Kim, Insung; Siddik, Manzar; Sadaf, Sharif Md.; Biju, Kuyyadi P.; Park, Sangsu; Hwang, Hyunsang

Description

In this work, various nano-scale Pr0.7Ca0.3MnO3(PCMO)-based memory devices with electrode diameters of 250 nm were fabricated, and the effect of the metal electrode/PCMO interface on resistive switching (RS) for PCMO-based resistive random access memories, is systematically investigated. The switching behavior could be improved not only by using a reactive metal (W and Al) but also by inserting a thin oxide tunnel barrier layer (yttria-stabilized zirconia, i.e., YSZ) or a dielectric Al2O3 layer...[Show more]

dc.contributor.authorLiu, Xinjun
dc.contributor.authorKim, Insung
dc.contributor.authorSiddik, Manzar
dc.contributor.authorSadaf, Sharif Md.
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorPark, Sangsu
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:15Z
dc.identifier.issn0374-4884
dc.identifier.urihttp://hdl.handle.net/1885/65542
dc.description.abstractIn this work, various nano-scale Pr0.7Ca0.3MnO3(PCMO)-based memory devices with electrode diameters of 250 nm were fabricated, and the effect of the metal electrode/PCMO interface on resistive switching (RS) for PCMO-based resistive random access memories, is systematically investigated. The switching behavior could be improved not only by using a reactive metal (W and Al) but also by inserting a thin oxide tunnel barrier layer (yttria-stabilized zirconia, i.e., YSZ) or a dielectric Al2O3 layer between the electrode and the PCMO film.
dc.publisherHanguk Mulli Hakhoe
dc.sourceJournal of the Korean Physical Society
dc.subjectKeywords: Oxygen migration; Pr0.7Ca0.3MnO3 thin film; Resistive switching; RRAM
dc.titleResistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume59
dc.date.issued2011
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100705 - Nanoelectronics
local.identifier.absfor100604 - Memory Structures
local.identifier.ariespublicationU3488905xPUB1121
local.type.statusPublished Version
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Insung, Gwangju Institute of Science and Technology
local.contributor.affiliationSiddik, Manzar, Gwangju Institute of Science and Technology
local.contributor.affiliationSadaf, Sharif Md., Gwangju Institute of Science and Technology
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsu, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue21
local.bibliographicCitation.startpage497
local.bibliographicCitation.lastpage500
local.identifier.doi10.3938/jkps.59.497
local.identifier.absseo970110 - Expanding Knowledge in Technology
dc.date.updated2016-02-24T09:57:13Z
local.identifier.scopusID2-s2.0-79961226261
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Liu_Resistive_switching_mechanism_2011.pdf585.74 kBAdobe PDF    Request a copy
Show simple item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator