Skip navigation
Skip navigation

Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun; Siddik, Manzar; Shin, Jungho; Lee, Joonmyoung; Hwang, Hyunsang

Description

We reported the resistive switching behavior in the Pt/WOx/W memory device fabricated with fully room temperature process. The devices show high resistance ratio (>140), reliable data retention at 85 °C and fast switching (100 ns). The field-induced resi

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65536
Source: Current Applied Physics
DOI: 10.1016/j.cap.2010.11.124

Download

File Description SizeFormat Image
01_Biju_Bipolar_resistance_switching_2011.pdf617.73 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator