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Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun; Siddik, Manzar; Shin, Jungho; Lee, Joonmyoung; Hwang, Hyunsang


We reported the resistive switching behavior in the Pt/WOx/W memory device fabricated with fully room temperature process. The devices show high resistance ratio (>140), reliable data retention at 85 °C and fast switching (100 ns). The field-induced resi

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Current Applied Physics
DOI: 10.1016/j.cap.2010.11.124


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