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Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures

Liu, Xinjun; Biju, Kuyyadi P.; Park, Sangsu; Kim, Insung; Siddik, Manzar; Sadaf, Sharif Md.; Hwang, Hyunsang

Description

An yttria-stabilized zirconia (YSZ) (∼10 nm) layer was designed and introduced by a pulse laser deposition method before a Pr0.7Ca0.3MnO3 (PCMO) film was deposited on the W bottom electrode (BE) with a sub-micron via-hole structure. Comparing Pt/PCMO/W

dc.contributor.authorLiu, Xinjun
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorPark, Sangsu
dc.contributor.authorKim, Insung
dc.contributor.authorSiddik, Manzar
dc.contributor.authorSadaf, Sharif Md.
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:13Z
dc.date.available2015-12-10T23:18:13Z
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/1885/65528
dc.description.abstractAn yttria-stabilized zirconia (YSZ) (∼10 nm) layer was designed and introduced by a pulse laser deposition method before a Pr0.7Ca0.3MnO3 (PCMO) film was deposited on the W bottom electrode (BE) with a sub-micron via-hole structure. Comparing Pt/PCMO/W
dc.publisherElsevier
dc.sourceCurrent Applied Physics
dc.subjectKeywords: Bottom electrodes; Low-power consumption; Oxygen ions; Pulse laser deposition; Pulse measurements; ReRAM; Resistive switching; Submicron; Tunneling barrier; Via-hole; DC power transmission; Manganese oxide; Switching systems; Zirconia; Structural properti Manganites thin film; ReRAM; Resistive switching; Tunneling barrier
dc.titleImproved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume11
dc.date.issued2011
local.identifier.absfor100705 - Nanoelectronics
local.identifier.absfor090604 - Microelectronics and Integrated Circuits
local.identifier.absfor091205 - Functional Materials
local.identifier.ariespublicationU3488905xPUB1119
local.type.statusPublished Version
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsu, Gwangju Institute of Science and Technology
local.contributor.affiliationKim, Insung, Gwangju Institute of Science and Technology
local.contributor.affiliationSiddik, Manzar, Gwangju Institute of Science and Technology
local.contributor.affiliationSadaf, Sharif Md., Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.bibliographicCitation.issue2 SUPPL.
local.bibliographicCitation.startpagee58
local.bibliographicCitation.lastpagee61
local.identifier.doi10.1016/j.cap.2010.11.123
dc.date.updated2016-02-24T09:57:13Z
local.identifier.scopusID2-s2.0-79960899808
local.identifier.thomsonID000294208600013
CollectionsANU Research Publications

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