All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature
A transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. Reliable and reproducible bipolar resistance memory switching performances are achieved. Fast and stable switching behaviour in the voltage pulse mode is demonstrated with set and reset durations of 50 ns and 100 ns, respectively. The...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
|01_Cao_All-ZnO-based_transparent_2011.pdf||505.09 kB||Adobe PDF||Request a copy|
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