Skip navigation
Skip navigation

Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory

Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun; Biju, Kuyyadi P.; Hwang, Hyunsang; Ignatiev, Alex

Description

This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active...[Show more]

dc.contributor.authorBourim, El Mostafa
dc.contributor.authorPark, Sangsoo
dc.contributor.authorLiu, Xinjun
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorHwang, Hyunsang
dc.contributor.authorIgnatiev, Alex
dc.date.accessioned2015-12-10T23:18:11Z
dc.identifier.issn1099-0062
dc.identifier.urihttp://hdl.handle.net/1885/65508
dc.description.abstractThis work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active ferroelectric layer has been demonstrated to play a crucial role in controlling the switching memory performance (resistance state stability and high switching endurance). Ferroelectric polarization and corresponding piezoelectric effect-induced lattice strains are found to be responsible for the resistive switching characteristics in this ferroelectric/manganite heterojunction.
dc.publisherElectrochemical Society Inc
dc.sourceElectrochemical and Solid-State Letters
dc.subjectKeywords: Co-doped; Ferroelectric layers; Ferroelectric polarization; Heterostructures; Lattice strain; Memory performance; Parallel capacitors; Piezo-electric effects; Pt electrode; Pulse modes; Resistance state; Resistance switching; Resistive switching; Resistiv
dc.titleFerroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume14
dc.date.issued2011
local.identifier.absfor090604 - Microelectronics and Integrated Circuits
local.identifier.absfor100604 - Memory Structures
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationU3488905xPUB1116
local.type.statusPublished Version
local.contributor.affiliationBourim, El Mostafa, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsoo, Gwangju Institute of Science and Technology
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.contributor.affiliationIgnatiev, Alex, Gwangju Institute of Science and Technology
local.description.embargo2037-12-31
local.bibliographicCitation.issue5
local.bibliographicCitation.startpageH225
local.bibliographicCitation.lastpageH228
local.identifier.doi10.1149/1.3556977
local.identifier.absseo970110 - Expanding Knowledge in Technology
dc.date.updated2016-02-24T09:57:11Z
local.identifier.scopusID2-s2.0-79952491596
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Bourim_Ferroelectric_polarization_2011.pdf1.33 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator