Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory
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Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun; Biju, Kuyyadi P.; Hwang, Hyunsang; Ignatiev, Alex
Description
This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active...[Show more]
dc.contributor.author | Bourim, El Mostafa | |
---|---|---|
dc.contributor.author | Park, Sangsoo | |
dc.contributor.author | Liu, Xinjun | |
dc.contributor.author | Biju, Kuyyadi P. | |
dc.contributor.author | Hwang, Hyunsang | |
dc.contributor.author | Ignatiev, Alex | |
dc.date.accessioned | 2015-12-10T23:18:11Z | |
dc.identifier.issn | 1099-0062 | |
dc.identifier.uri | http://hdl.handle.net/1885/65508 | |
dc.description.abstract | This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active ferroelectric layer has been demonstrated to play a crucial role in controlling the switching memory performance (resistance state stability and high switching endurance). Ferroelectric polarization and corresponding piezoelectric effect-induced lattice strains are found to be responsible for the resistive switching characteristics in this ferroelectric/manganite heterojunction. | |
dc.publisher | Electrochemical Society Inc | |
dc.source | Electrochemical and Solid-State Letters | |
dc.subject | Keywords: Co-doped; Ferroelectric layers; Ferroelectric polarization; Heterostructures; Lattice strain; Memory performance; Parallel capacitors; Piezo-electric effects; Pt electrode; Pulse modes; Resistance state; Resistance switching; Resistive switching; Resistiv | |
dc.title | Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 14 | |
dc.date.issued | 2011 | |
local.identifier.absfor | 090604 - Microelectronics and Integrated Circuits | |
local.identifier.absfor | 100604 - Memory Structures | |
local.identifier.absfor | 091203 - Compound Semiconductors | |
local.identifier.ariespublication | U3488905xPUB1116 | |
local.type.status | Published Version | |
local.contributor.affiliation | Bourim, El Mostafa, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Park, Sangsoo, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Liu, Xinjun, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Biju, Kuyyadi P., Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Hwang, Hyunsang, Gwangju Institute of Science and Technology | |
local.contributor.affiliation | Ignatiev, Alex, Gwangju Institute of Science and Technology | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 5 | |
local.bibliographicCitation.startpage | H225 | |
local.bibliographicCitation.lastpage | H228 | |
local.identifier.doi | 10.1149/1.3556977 | |
local.identifier.absseo | 970110 - Expanding Knowledge in Technology | |
dc.date.updated | 2016-02-24T09:57:11Z | |
local.identifier.scopusID | 2-s2.0-79952491596 | |
Collections | ANU Research Publications |
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