Zhang, Feng; Liu, Xinjun; Li, Xiaomin; Gao, Xiangdong; Wu, Liang; Zhuge, Fuwei; Wang, Qun; Yang, Rui; He, Yong
In this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient ZnO 1-x films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen...[Show more]
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