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Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Zhang, Feng; Liu, Xinjun; Li, Xiaomin; Gao, Xiangdong; Wu, Liang; Zhuge, Fuwei; Wang, Qun; Yang, Rui; He, Yong


In this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient ZnO 1-x films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Solid State Communications
DOI: 10.1016/j.ssc.2012.04.073


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