Skip navigation
Skip navigation

Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Zhang, Feng; Liu, Xinjun; Li, Xiaomin; Gao, Xiangdong; Wu, Liang; Zhuge, Fuwei; Wang, Qun; Yang, Rui; He, Yong

Description

In this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient ZnO 1-x films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65473
Source: Solid State Communications
DOI: 10.1016/j.ssc.2012.04.073

Download

File Description SizeFormat Image
01_Zhang_Effect_of_defect_content_on_2012.pdf717.77 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator