Growth and characterization of self-assembled InAs/InP quantum dot structures
InAs quantum dots (QDs) are grown on InP or lattice matched GaInAsP buffers using horizontal flow metal-organic chemical vapor deposition (MOCVD) at a pressure of 180 mbar. A range of techniques, such as photoluminescence (PL), atomic force microscopy, and plan-view transmission electron microscopy is used to characterize the QD and other semiconductor layers. The effects of different growth parameters, such as V/III ratio and growth time, and the effects of buffer layers, interlayers, and cap...[Show more]
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|Source:||Journal of Nanoscience and Nanotechnology|
|01_Barik_Growth_and_characterization_of_2010.pdf||1.88 MB||Adobe PDF||Request a copy|
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