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Growth and characterization of self-assembled InAs/InP quantum dot structures

Barik, Satyanarayan; Wong-Leung, Jennifer; Jagadish, Chennupati; Tan, Hark Hoe


InAs quantum dots (QDs) are grown on InP or lattice matched GaInAsP buffers using horizontal flow metal-organic chemical vapor deposition (MOCVD) at a pressure of 180 mbar. A range of techniques, such as photoluminescence (PL), atomic force microscopy, and plan-view transmission electron microscopy is used to characterize the QD and other semiconductor layers. The effects of different growth parameters, such as V/III ratio and growth time, and the effects of buffer layers, interlayers, and cap...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Journal of Nanoscience and Nanotechnology
DOI: 10.1166/jnn.2010.2024


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