Nitrogen deficiency and metal dopant induced sub-stoichiometry in titanium nitride thin films: A comparative study
Sub-stoichiometric (nitrogen-deficient) and Nb-substituted (Ti 1-y Nb N, 0 ≤ y ≤ 1) titanium nitride thin films were deposited by means of radio frequency magnetron sputtering on SiO2 and Si (311) substrates and compared. Thickness of TiN films varied
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|Source:||International Journal of Materials Research|
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