Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon
In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe in n-type silicon compensated with thermal donors, our results suggest the dominant defect level in our doping range to be a shallow level (EC-ET 0.15 eV), with a capture cross-section ratio σn/σp of around 0.006, suggesting a negatively charged...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
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