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Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging

Liu, An Yao; Fan, Yang-Chieh; MacDonald, Daniel


We present high-resolution images of the lateral distribution of interstitial iron across wafers from various positions along the length of a directionally solidified multicrystalline silicon ingot. Iron images were taken on wafers in the as-cut state and also after two different phosphorus gettering steps performed at 845°C for 30 min, one with an additional anneal at 600°C for 5 h (referred to as extended gettering). The iron images were obtained by taking calibrated photoluminescence (PL)...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Progress in Photovoltaics: Research and Applications
DOI: 10.1002/pip.1082


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