Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging
We present high-resolution images of the lateral distribution of interstitial iron across wafers from various positions along the length of a directionally solidified multicrystalline silicon ingot. Iron images were taken on wafers in the as-cut state and also after two different phosphorus gettering steps performed at 845°C for 30 min, one with an additional anneal at 600°C for 5 h (referred to as extended gettering). The iron images were obtained by taking calibrated photoluminescence (PL)...[Show more]
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|Source:||Progress in Photovoltaics: Research and Applications|
|01_Liu_Interstitial_iron_2011.pdf||4.04 MB||Adobe PDF||Request a copy|
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