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The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

MacDonald, Daniel; Liu, An Yao; Cuevas, Andres; Lim, Bianca; Schmidt, Jan

Description

We review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to...[Show more]

dc.contributor.authorMacDonald, Daniel
dc.contributor.authorLiu, An Yao
dc.contributor.authorCuevas, Andres
dc.contributor.authorLim, Bianca
dc.contributor.authorSchmidt, Jan
dc.date.accessioned2015-12-10T23:09:44Z
dc.identifier.issn1862-6300
dc.identifier.urihttp://hdl.handle.net/1885/63424
dc.description.abstractWe review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to resolve these problems. In this paper we attempt to extend this model to the case of boron-containing n-type silicon. The model predicts that the defect will occur in such material, as has been observed experimentally. However, the tentatively predicted impact of the defect on carrier lifetimes in such material does not appear to be consistent with recent experimental results.
dc.publisherWiley Interscience
dc.sourcePhysica Status Solidi A
dc.subjectKeywords: Boron-containing; Boron-oxygen defects; compensation; Crystalline silicons; Experimental observation; Interstitial boron; N type silicon; New model; recombination; The standard model; Boron; Boron compounds; Crystalline materials; Oxygen; Phosphorus; Crys boron-oxygen defect; compensation; recombination; silicon
dc.titleThe impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume208
dc.date.issued2011
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu4334215xPUB804
local.type.statusPublished Version
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationLiu, An Yao, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationLim, Bianca, Institut fur Solarenergieforschung Hameln (ISFH)
local.contributor.affiliationSchmidt, Jan , Institute for Solar Energy Research Hameln (ISFH)
local.description.embargo2037-12-31
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage559
local.bibliographicCitation.lastpage563
local.identifier.doi10.1002/pssa.201000146
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2016-02-24T11:03:12Z
local.identifier.scopusID2-s2.0-79952529985
local.identifier.thomsonID000288177600013
CollectionsANU Research Publications

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