The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon
We review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to...[Show more]
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi A|
|01_MacDonald_The_impact_of_dopant_2011.pdf||123.51 kB||Adobe PDF||Request a copy|
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