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The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

MacDonald, Daniel; Liu, An Yao; Cuevas, Andres; Lim, Bianca; Schmidt, Jan


We review recent results relating to the boron-oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron-oxygen defect, which involves substitutional boron. In addition, the proposed presence of boron-phosphorus pairs as a possible explanation for these findings is inconsistent with numerous other results. A recently proposed new model for the defect, based on interstitial boron, appears to...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Physica Status Solidi A
DOI: 10.1002/pssa.201000146


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