Jin, Hao; Weber, Klaus; Paudyal, Bijaya; Zhang, Chun
Negative charges were tunneled from Si surface into nitride film in the nitride/oxide/Si stacks by bias or corona charging. The tunneled charges appear to have linear relationship with the applied electrical field. A maximum negative charge density exists, when all K centers in nitride film are negative charged. At high bias condition, Si interface will take the risk of high energy electron damage. The damage is thermal unstable and can be annealed out at 300-400°C for very short time. Linear...[Show more]
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