Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells
We have investigated the effect of the light-induced deep-level recombination centre specific to boron-doped, oxygen-contaminated Czochralski (Cz) silicon on the current-voltage characteristic of Cz silicon solar cells by means of numerical simulation and experiment. The device simulation predicts the occurrence of a shoulder in the current-voltage curve after activating the characteristic recombination centre. The physical reason for the non-ideal diode behaviour, characterised by a local...[Show more]
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|Source:||Progress in Photovoltaics: Research and Applications|
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