General parameterization of Auger recombination in crystalline silicon
A parameterization for band-to-band Auger recombination in silicon at 300 K is proposed. This general parameterization accurately fits the available experimental lifetime data for arbitrary injection level and arbitrary dopant density, for both n-type and p-type dopants. We confirm that Auger recombination is enhanced above the traditional free-particle rate at both low injection and high injection conditions. Further, the rate of enhancement is shown to be less for highly injected intrinsic...[Show more]
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|Source:||Journal of Applied Physics|
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