Boron, phosphorus and aluminum gettering of iron in crystalline silicon: Experiments and modelling
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Phang, Sieu Pheng; MacDonald, Daniel
Description
A direct comparison of boron diffusion gettering, phosphorus gettering, and aluminum annealing gettering of iron is presented, using both experiment and simulation results. Float zone silicon samples were implanted with Fe and exposed to either B, P, or Al gettering at various temperatures for experimental measurements. The gettering model simulates dopant diffusion, segregation to doped layers, and diffusion of interstitial iron towards the gettering layers. The segregation model for Boron...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/63022 |
Source: | Proceedings of PVSC 2010 |
DOI: | 10.1109/PVSC.2010.5616886 |
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File | Description | Size | Format | Image |
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01_Phang_Boron,_phosphorus_and_aluminum_2010.pdf | 860.97 kB | Adobe PDF | Request a copy |
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