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Boron, phosphorus and aluminum gettering of iron in crystalline silicon: Experiments and modelling

Phang, Sieu Pheng; MacDonald, Daniel

Description

A direct comparison of boron diffusion gettering, phosphorus gettering, and aluminum annealing gettering of iron is presented, using both experiment and simulation results. Float zone silicon samples were implanted with Fe and exposed to either B, P, or Al gettering at various temperatures for experimental measurements. The gettering model simulates dopant diffusion, segregation to doped layers, and diffusion of interstitial iron towards the gettering layers. The segregation model for Boron...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/63022
Source: Proceedings of PVSC 2010
DOI: 10.1109/PVSC.2010.5616886

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