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Effect of a post-deposition anneal on AL2O3/SI interface properties

Benick, J; Richter, A; Li, Tsu-Tsung (Andrew); Grant, Nicholas; McIntosh, Keith; Ren, Yongling; Weber, Klaus; Hermle, M; Glunz, Stefan

Description

While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal...[Show more]

dc.contributor.authorBenick, J
dc.contributor.authorRichter, A
dc.contributor.authorLi, Tsu-Tsung (Andrew)
dc.contributor.authorGrant, Nicholas
dc.contributor.authorMcIntosh, Keith
dc.contributor.authorRen, Yongling
dc.contributor.authorWeber, Klaus
dc.contributor.authorHermle, M
dc.contributor.authorGlunz, Stefan
dc.coverage.spatialHawaii USA
dc.date.accessioned2015-12-10T23:07:46Z
dc.date.createdJune 20-25 2010
dc.identifier.isbn9781424458929
dc.identifier.urihttp://hdl.handle.net/1885/63004
dc.description.abstractWhile Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal on the interface properties, density of negative fixed charges Qf and density of interface traps Dit, will be investigated and correlated to the measured minority carrier lifetime. In the case of plasma enhanced ALD, Qf is already high in the as-deposited state and the annealing process only has a minor effect on Qf (Q f increases by 20-50 %, depending on the annealing temperature). The Dit however is strongly reduced by the post-deposition anneal, decreasing by two orders of magnitude. This large reduction in Dit is a prerequisite for benefiting from the strong field effect induced by the high density of negative charges of the Al2O3.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesIEEE Photovoltaic Specialists Conference (PVSC 2010)
dc.sourceProceedings of PVSC 2010
dc.subjectKeywords: Annealing process; Annealing temperatures; As-deposited state; Doped silicon; High density; Interface property; Interface traps; Minority carrier lifetimes; Negative charge; Negative fixed charge; Orders of magnitude; P-type; Post-deposition anneal; Stron
dc.titleEffect of a post-deposition anneal on AL2O3/SI interface properties
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2010
local.identifier.absfor090608 - Renewable Power and Energy Systems Engineering (excl. Solar Cells)
local.identifier.ariespublicationu4334215xPUB759
local.type.statusPublished Version
local.contributor.affiliationBenick, J, Fraunhofer Institute for Solar Energy Systems (ISE)
local.contributor.affiliationRichter, A, Fraunhofer Institute for Solar Energy Systems
local.contributor.affiliationLi, Tsu-Tsung (Andrew), College of Engineering and Computer Science, ANU
local.contributor.affiliationGrant, Nicholas, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, ANU
local.contributor.affiliationRen, Yongling, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationHermle, M, Fraunhofer Institute
local.contributor.affiliationGlunz, Stefan , Fraunhofer Institute
local.description.embargo2037-12-31
local.bibliographicCitation.startpage000891
local.bibliographicCitation.lastpage000896
local.identifier.doi10.1109/PVSC.2010.5614148
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2016-02-24T11:02:55Z
local.identifier.scopusID2-s2.0-78650089183
CollectionsANU Research Publications

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