Effect of a post-deposition anneal on AL2O3/SI interface properties
While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal...[Show more]
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|Source:||Proceedings of PVSC 2010|
|01_Benick_Effect_of_a_post-deposition_2010.pdf||641.84 kB||Adobe PDF||Request a copy|
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