Benick, J; Richter, A; Li, Tsu-Tsung (Andrew); Grant, Nicholas; McIntosh, Keith; Ren, Yongling; Weber, Klaus; Hermle, M; Glunz, Stefan
While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal...[Show more]
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