Characterization of boron surface doping effects on PECVD silicon nitride passivation
In this paper, we investigate the dependence of surface recombination of B diffused and undiffused PECVD SiNx passivated emitters on the net electrostatic charge density. We show that the application of positive surface charge results in a significant increase in the surface recombination of PECVD SiNx passivated B diffused emitters, even for high B surface concentrations. On the other hand, negative charge causes a substantial reduction in surface recombination. Under accumulation conditions,...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of PVSC 2010|
|01_Nursam_Characterization_of_boron_2010.pdf||650.06 kB||Adobe PDF||Request a copy|
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