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Vacuum violet photo-response of AlGaN-based Metal-semiconductor-metal photodetectors

Zhou, Dong; Lu, Hai; Chen, Dunjun; Ren, Fang-Fang; Zhang, R.; Zheng, Youdou; Li, Liang

Description

Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibi

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/62408
Source: Chinese Physics Letters
DOI: 10.1088/0256-307X/30/11/117301

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