Vacuum violet photo-response of AlGaN-based Metal-semiconductor-metal photodetectors
Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibi
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|Source:||Chinese Physics Letters|
|01_Zhou_Vacuum_violet_photo-response_2013.pdf||610.34 kB||Adobe PDF||Request a copy|
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