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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors

Huang, Xiaoming; Wu, Chenfei; Lu, Hai; Ren, Fang-Fang; Chen, Dunjun; Jiang, Rong; Zhang, R.; Zheng, Youdou; Xu, Qingyu

Description

The electrical properties of amorphous indium-gallium-zinc oxide thin film transistors are measured in the temperature range from 70 to 300 K. The device shows normal enhancement mode operation with significantly reduced drain current at low temperature.

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/62338
Source: Solid-State Electronics
DOI: 10.1016/j.sse.2013.04.025

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