Skip navigation
Skip navigation

GaN Schottky barrier diodes with high-resistivity edge termination formed by boron implantation

Wu, Wei-Zong; Fu, Li-Hua; Lu, Hai; Ren, Fang-Fang; Chen, Dunjun; Zhang, R.; Zheng, Youdou


Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes (SBDs), which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown voltage. We adopt a high-resistivity ring structure as the edge termination for planar GaN SBDs. The edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged layer. In the implant dose and energy ranges studied...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: Chinese Physics Letters
DOI: 10.1088/0256-307X/30/5/057303


File Description SizeFormat Image
01_Wu_GaN_Schottky_barrier_diodes_2013.pdf582.98 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator