Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes
The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (< 1 A/cm2) with a...[Show more]
|Collections||ANU Research Publications|
|Source:||Chinese Physics B|
|01_Jiang_Temperature-dependent_2013.pdf||307.08 kB||Adobe PDF||Request a copy|
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