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Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

Jiang, Rong; Lu, Hai; Chen, Dunjun; Ren, Fang-Fang; Yan, Da-Wei; Zhang, R.; Zheng, Youdou

Description

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (< 1 A/cm2) with a...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/62300
Source: Chinese Physics B
DOI: 10.1088/1674-1056/22/4/047805

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