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High deep-ultraviolet quantum efficiency GaN P-I-N photodetectors with thin P-GaN contact layer

Lian, Hai-Feng; Wang, Guo-Sheng; Lu, Hai; Ren, Fang-Fang; Chen, Dunjun; Zhang, R.; Zheng, Youdou

Description

GaN ultraviolet (UV) p - i - n photodetectors (PDs) with a 40 nm thin p-GaN contact layer are fabricated on sapphire substrates, which exhibit enhanced quantum efficiency especially in a deep-UV wavelength range. The PDs show good rectification behavior and low dark current in pA level for reverse bias up to -10 V. Under zero bias, the maximum quantum efficiency of the PD at 360 nm is close to 59.4% with a UV/visible rejection ratio more than 4 orders of magnitude. Even at a short wavelength of...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
URI: http://hdl.handle.net/1885/62280
Source: Chinese Physics Letters
DOI: 10.1088/0256-307X/30/1/017302

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