High deep-ultraviolet quantum efficiency GaN P-I-N photodetectors with thin P-GaN contact layer
GaN ultraviolet (UV) p - i - n photodetectors (PDs) with a 40 nm thin p-GaN contact layer are fabricated on sapphire substrates, which exhibit enhanced quantum efficiency especially in a deep-UV wavelength range. The PDs show good rectification behavior and low dark current in pA level for reverse bias up to -10 V. Under zero bias, the maximum quantum efficiency of the PD at 360 nm is close to 59.4% with a UV/visible rejection ratio more than 4 orders of magnitude. Even at a short wavelength of...[Show more]
|Collections||ANU Research Publications|
|Source:||Chinese Physics Letters|
|01_Lian_High_deep-ultraviolet_quantum_2013.pdf||671.44 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.