Lian, Hai-Feng; Wang, Guo-Sheng; Lu, Hai; Ren, Fang-Fang; Chen, Dunjun; Zhang, R.; Zheng, Youdou
GaN ultraviolet (UV) p - i - n photodetectors (PDs) with a 40 nm thin p-GaN contact layer are fabricated on sapphire substrates, which exhibit enhanced quantum efficiency especially in a deep-UV wavelength range. The PDs show good rectification behavior and low dark current in pA level for reverse bias up to -10 V. Under zero bias, the maximum quantum efficiency of the PD at 360 nm is close to 59.4% with a UV/visible rejection ratio more than 4 orders of magnitude. Even at a short wavelength of...[Show more]
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