Transport properties of p-type compensated silicon at room temperature
Rougieux, Fiacre; MacDonald, Daniel; Cuevas, Andres
Deliberate dopant compensation has proven to be an effective way to control ingot resistivity, although the impact of compensation on carrier recombination and mobilities remains under investigation. This paper summarizes recent findings regarding the carrier transport properties of compensated silicon. The capacity of common mobility models to describe compensated silicon is reviewed and compared to experimental data. The observed reduction of both majority and minority carrier mobility due to...[Show more]
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|Source:||Progress in Photovoltaics: Research and Applications|
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