The Thermal Stability of Atomic H Plasma Produced Interface Defects on Si-Si02 Stack
The Si-SiO2 interface is still very important in crystalline silicon solar cell devices. While hydrogen is important for the passivation of defects at the Si-SiO2 interface, atomic H at low temperatures can also introduce additional interface defects, which lead to substantially increased recombination. Previous work has shown that the defects are thermally unstable, however detailed properties of the defects have not been investigated. This paper investigates the thermal annealing behavior of...[Show more]
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|Source:||Proceedings of PVSC 2010|
|01_Zhang_The_Thermal_Stability_of_2010.pdf||526.29 kB||Adobe PDF||Request a copy|
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