Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells
Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of...[Show more]
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