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Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Yang, Xinbo; Müller, Ralph; Shalav, Avi; Xu, Lujia; Liang, Wensheng; Zhang, Rui; Bi, Qunyu (Sarah); Weber, Klaus; MacDonald, Daniel; Elliman, Robert


Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: Energy Procedia
DOI: 10.1016/j.egypro.2014.08.093


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