Skip navigation
Skip navigation

Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Yang, Xinbo; Müller, Ralph; Shalav, Avi; Xu, Lujia; Liang, Wensheng; Zhang, Rui; Bi, Qunyu (Sarah); Weber, Klaus; MacDonald, Daniel; Elliman, Robert

Description

Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/61722
Source: Energy Procedia
DOI: 10.1016/j.egypro.2014.08.093

Download

File Description SizeFormat Image
01_Yang_Boron_implanted,_laser_2014.pdf410.58 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator