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The effect of annealing ambient on carrier recombination in boron implanted silicon

Ratcliff, Thomas; Fong, Kean; Shalav, Avi; Elliman, Robert; Blakers, Andrew

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The selection of either an oxidising or inert ambient during high temperature annealing is shown to affect dopant activation and electron-hole recombination in boron implanted silicon samples. Samples implanted with B at fluence between 3 × 1014 cm-2 to

dc.contributor.authorRatcliff, Thomas
dc.contributor.authorFong, Kean
dc.contributor.authorShalav, Avi
dc.contributor.authorElliman, Robert
dc.contributor.authorBlakers, Andrew
dc.date.accessioned2015-12-10T23:01:40Z
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/61699
dc.description.abstractThe selection of either an oxidising or inert ambient during high temperature annealing is shown to affect dopant activation and electron-hole recombination in boron implanted silicon samples. Samples implanted with B at fluence between 3 × 1014 cm-2 to
dc.publisherWiley-VCH Verlag GMBH
dc.sourcePhysica Status Solidi: Rapid Research Letters
dc.titleThe effect of annealing ambient on carrier recombination in boron implanted silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume8
dc.date.issued2014
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.ariespublicationU3594520xPUB632
local.type.statusPublished Version
local.contributor.affiliationRatcliff, Thomas, College of Engineering and Computer Science, ANU
local.contributor.affiliationFong, Kean, College of Engineering and Computer Science, ANU
local.contributor.affiliationShalav, Avi, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBlakers, Andrew, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage827
local.bibliographicCitation.lastpage830
local.identifier.doi10.1002/pssr.201409295
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2015-12-10T08:29:18Z
local.identifier.scopusID2-s2.0-84905636821
local.identifier.thomsonID000344006800003
CollectionsANU Research Publications

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