How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs
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Ullah, A. R.; Joyce, Hannah J; Burke, Adam M.; Wong-Leung, Jennifer; Jagadish, Chennupati; Micolich, Adam Paul; Tan, Hark Hoe
Description
We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at...[Show more]
Collections | ANU Research Publications |
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Date published: | 2014 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/61677 |
Source: | COMMAD 2014 |
DOI: | 10.1109/COMMAD.2014.7038712 |
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01_Ullah_How_InAs_Crystal_Phase_affects_2014.pdf | 276.82 kB | Adobe PDF | Request a copy |
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