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How InAs Crystal Phase affects the Electrical Performance of InAs Nanowire FETs

Ullah, A. R.; Joyce, Hannah J; Burke, Adam M.; Wong-Leung, Jennifer; Jagadish, Chennupati; Micolich, Adam Paul; Tan, Hark Hoe


We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Conference paper
Source: COMMAD 2014
DOI: 10.1109/COMMAD.2014.7038712


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